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[1]刘光辉,江晓红,庄玉召,等.N掺杂TiO2复合膜中N晶格位置转变[J].南京工业大学学报(自然科学版),2016,38(06):70-75.[doi:10.3969/j.issn.1671-7627.2016.06.012]
 LIU Guanghui,JIANG Xiaohong,ZHUANG Yuzhao,et al.Lattice position transformation of N in N-doping TiO2 composite film[J].Journal of NANJING TECH UNIVERSITY(NATURAL SCIENCE EDITION),2016,38(06):70-75.[doi:10.3969/j.issn.1671-7627.2016.06.012]
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N掺杂TiO2复合膜中N晶格位置转变()
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《南京工业大学学报(自然科学版)》[ISSN:1671-7627/CN:32-1670/N]

卷:
38
期数:
2016年06期
页码:
70-75
栏目:
出版日期:
2016-11-15

文章信息/Info

Title:
Lattice position transformation of N in N-doping TiO2 composite film
文章编号:
1671-7627(2016)06-0070-06
作者:
刘光辉1江晓红1庄玉召1陆路德1PILIPTSOUDG2ROGACHEVAV2
1.南京理工大学 中国-白俄罗斯“真空等离子体技术”国际科学实验室,江苏 南京 210094; 2.白俄罗斯戈梅利国立大学,戈梅利 246019
Author(s):
LIU Guanghui1JIANG Xiaohong1ZHUANG Yuzhao1LU Lude1PILIPTSOU D G2ROGACHEV A V2
1.International Chinese-Belorussian Scientific Laboratory on Vacuum-Plasma Technology,Nanjing University of Science and Technology,Nanjing 210094,China; 2.Francisk Skorina Gomel State University,Gomel 246019,Belarus
关键词:
N掺杂Ti薄膜 N掺杂TiO2薄膜 替代型N 填隙型N
Keywords:
N-doping Ti film N-doping TiO2 film substitutional N interstitial N
分类号:
TB74
DOI:
10.3969/j.issn.1671-7627.2016.06.012
文献标志码:
A
摘要:
采用磁过滤真空直流阴极弧蒸发工艺在石英基底上沉积N掺杂Ti薄膜,随后将其在马弗炉中以不同的退火温度(100~700 ℃)热处理制备N掺杂TiO2薄膜,采用X线衍射仪(XRD)、拉曼光谱仪(Raman)、X线光电子能谱(XPS)和扫描电子显微镜(SEM)分析表征。结果表明:初始态N掺杂Ti薄膜为包含少量TiN相的Ti薄膜,在300 ℃退火处理时,N掺杂Ti薄膜直接氧化生成N掺杂金红石相TiO2薄膜。初始态的N掺杂Ti薄膜表面平整、颗粒细密,与基底附着牢固,经700 ℃退火处理后,TiO2颗粒得到了良好的结晶生长,薄膜厚度增加了60%。当热处理温度为600 ℃时,N掺杂TiO2复合膜中替代型N开始转变为填隙型N,由于填隙型N具有更高的能级,这种N位置的转变进一步窄化了N掺杂TiO2的能带宽度,提高了对可见光的利用率。
Abstract:
A simple method by annealing of N-doping Ti film to prepare N-doping TiO2 film was employed,where the N-doping Ti film was deposited by filtered cathode arc evaporation with quartz as substrate.N-doping TiO2 film was characterized by X-ray diffraction(XRD),Raman spectrometer(Raman),X-ray photoelectron spectroscopy(XPS)and scanning electron microscope(SEM).Results showed that N-doping Ti film was consisted of Ti containing a small amount of TiN,and was converted to N-doping rutile phase TiO2 film directly as the annealing temperature was raised to 300 ℃.The initial state film was attached to substrate firmly.After annealing at 700 ℃,titanium oxide particles were well crystallized growth and the thickness of the film increased by 60%.When the heat treatment temperature improved to 600 ℃,interstitial N was emerged in TiO2 lattice,which was transferred from substitutional site.For the interstitial N energy state was slightly higher than that of substitutional N and the bandgap of N-doping TiO2 film could be further narrowed leading to an increased availability on visible light.

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备注/Memo

备注/Memo:
收稿日期:2015-09-23
基金项目:国家自然科学基金(51373077); 科技部政府间合作项目(CB11-9,CB11-10)
作者简介:刘光辉(1991—),男,江苏徐州人,硕士,主要研究方向为掺杂薄膜及复合薄膜; 江晓红(联系人),教授,E-mail: jiangxh24@njust.edu.cn.
引用本文:刘光辉,江晓红,庄玉召,等.N掺杂TiO2复合膜中N晶格位置转变[J].南京工业大学学报(自然科学版),2016,38(6):70-75..
更新日期/Last Update: 2016-12-20